MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF1366-1107 - Superseded 注意: 本文書は，2011年，バロット投票により廃止が承認された。

注意: 本文書は，2011年，バロット投票により廃止が承認された。

1  This Specification is intended to prevent confusion among the manufacturers of stainless steel reducing weld fittings

NOTE 1: Although no limits are imposed on extractable contaminants from resin pellets by this Specification

and device structures on glass in flat panel display (FPD) manufacturing

2  This Standard does not require data transmitted over an established session to be encrypted

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF1366-1107 - Superseded 注意: 本文書は，2011年，バロット投票により廃止が承認された。This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and